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CMP Lapping Polishing Machine for Silicon Wafer, Lapping Machine, Polishing Machine image 1CMP Lapping Polishing Machine for Silicon Wafer, Lapping Machine, Polishing Machine image 2CMP Lapping Polishing Machine for Silicon Wafer, Lapping Machine, Polishing Machine image 3CMP Lapping Polishing Machine for Silicon Wafer, Lapping Machine, Polishing Machine image 4

CMP Lapping Polishing Machine for Silicon Wafer, Lapping Machine, Polishing Machine

Guangzhou Minder-Hightech co.,Ltd

Price $60000.00 / Set
Mini Order
-+Subtotal: $60000
Availability In Stock
Purchase details

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Eligible for returns and refunds View More

Working Style
High-speed universal
Disc Diameter
230mm
Variable Speed
With Variable Speed
Transport Package
Sea
Specification
2000KG
Trademark
MINDERHIGHTECH
Origin
Guangzhou
HS Code
8501109101

MDS8104LMFR/MDS8104PMFR

SEMIAUTO SUBSTRATE LAPPING/POLISHING MACHINE
Machine Application

 

Process Type

 

Sort by Process Material

 

Sort by Application
SINGLE SIDE
PLATE
LAPPING &
POLISHING		Metal & Alloy
Ceramic
Oxide
Carbide
Glass
Plastic
Semi Conductor		LED substrate
Si, SiC, Ge, Ge-Si, GaN, GaAs, GaAsAl, GaAsP, InSb, InP, ZnO, AlN, Al2O3, etc.
ResinPE,E/VAC,SBS,SBR,NBR,SR,BR,PR
PCB,, adhensive,coating,circuit
Optical ,,,HUDoptical lens,HUD glass, screen glass
Radar
Gemstaone
Others		Oxide coating plate
Jade,sapphire,agate etc
Valve sealing ring. Micrometer Diamond,bearing,etc
Lapping can only remove slight thickness of object.if thining margin>=100um, thinner machine are needed.(contact us for thinner)
Machine Specification
Machine Class
CMP Lapping Polishing Machine for Silicon Wafer
 
Standard Specification
Machine SeriesMDS8104LMFR
Plate diameterΦ810mm
Max. Object DiameterΦ350 mm
Number of station4
Plate Rotate Speed0-90 RPM
Cylinder Bar Rotate Speed0-40 RPM
Facing & Grooving Speed
Not include in Polishing		0-120mm/m
Total weight2200kg
Floor space2200*1200mm
 
Optional ChoiceSpecification
ControlsDigital  /  Touch-screen PLC
Pressure SourceIntegrated with PLC
Facing & Grooving systemDigital  /  Manual control feeding depth integrated with PLC  /   
PLC control feeding depth integrated with PLC
Plate cooling systemIntegrated in Machine
Slurry supply systemDigital  /  integrated with PLC
Cylinder Bar Drive SystemIntegrated with PLC
Dust Vacuum systemManual  /  Integrated with PLC

1,Sample making based on production requirement can confirm the necessity of optional kits.
2,The shaded options is buit in this machine.
3,Facing and Grooving system is unnecessary for polishing machine and not configured.
4,Substrate Lapping/Polishing machine is highly configured, A dust-proof shelter is utilized for protection from fugitive or solid particle scraping against object's surface while processing, especially when polishing.
5,Contact us for more type of lapping/polishing machine



 
Samples

Sample Record

Application & Material		 

MDS8104LMFR/MDS8104PMFR

SEMIAUTO SUBSTRATE LAPPING/POLISHING MACHINE
Machine Application

Process Type

Sort by Process Material

 

Sort by Application
SINGLE SIDE
PLATE
LAPPING &
POLISHING		Metal & Alloy
Ceramic
Oxide
Carbide
Glass
Plastic
Semi Conductor		LED substrate
Si, SiC, Ge, Ge-Si, GaN, GaAs, GaAsAl, GaAsP, InSb, InP, ZnO, AlN, Al2O3, etc.
ResinPE,E/VAC,SBS,SBR,NBR,SR,BR,PR
PCB,, adhensive,coating,circuit
Optical ,,HUDoptical lens,HUD glass, screen glass
Radar
Gemstaone
Others		Oxide coating plate
Jade,sapphire,agate etc
Valve sealing ring. Micrometer Diamond,bearing,etc
Lapping can only remove slight thickness of object.if thining margin>=100um, thinner machine are needed.(contact us for thinner)
Machine Specification
Machine Class
    
()
Flat Lapping
Machine		()
Double Disc
Lapping Machine
Brush Polishing
Machine
Substrate Grinding/Thinning Machine
 
Standard Specification
Machine SeriesMDS8104LMFR
Plate diameterΦ810mm
Max. Object DiameterΦ350 mm
Number of station4
Plate Rotate Speed0-90 RPM
Cylinder Bar Rotate Speed0-40 RPM
Facing & Grooving Speed
Not include in Polishing		0-120mm/m
Total weight2200kg
Floor space2200*1200mm
 
Optional ChoiceSpecification
ControlsDigital  /  Touch-screen PLC
Pressure SourceIntegrated with PLC
Facing & Grooving systemDigital  /  Manual control feeding depth integrated with PLC  /   
PLC control feeding depth integrated with PLC
Plate cooling systemIntegrated in Machine
Slurry supply systemDigital  /  integrated with PLC
Cylinder Bar Drive SystemIntegrated with PLC
Dust Vacuum systemManual  /  Integrated with PLC

1,Sample making based on production requirement can confirm the necessity of optional kits.
2,The shaded options is buit in this machine.
3,Facing and Grooving system is unnecessary for polishing machine and not configured.
4,Substrate Lapping/Polishing machine is highly configured, A dust-proof shelter is utilized for protection from fugitive or solid particle scraping against object's surface while processing, especially when polishing.
5,Contact us for more type of lapping/polishing machine



 
Samples

Sample Record

Application & Material
Diagonal Diameter
Process
Type
Flatness
Roughness
Parallel
Thickness
Note
 Industrial Sapphire

 		variousLapping
Polishing		2μm≤Ra 0.02 μm5μm
±1μm		0.2mmN
 Solar WaferVariousLapping1μmNot Required2μm
±1μm		0.15mmN
 Substrate
CaC2		Φ22mmLapping0.5μmNot Required1μm
±0.5μm		0.05mmN
 Wafer
Si		VariousLapping
Polishing		2μm≤Ra 0.02 μm3μm
±1μm		0.1mmN
 LED substrate copperΦ169mmLapping
Polishing 		5μm≤Ra 0.01 μm5μm
±1μm		Not required N
 Substrate
MgO 		Φ72mmLapping1μmNot Required1μm0.1mmN
 Substrate
Al2O3		Φ158mmLapping
Polishing		3um≤Ra 0.02 μm3um
±1μm		0.13mmN
 
 
                

onal Diameter
Process
Type
Flatness		Roughness
Parallel
Thickness
Note
 Industrial Sapphire

 		variousLapping
Polishing		2μm≤Ra 0.02 μm5μm
±1μm		0.2mmN
 Solar WaferVariousLapping1μmNot Required2μm
±1μm		0.15mmN
 Substrate
CaC2		Φ22mmLapping0.5μmNot Required1μm
±0.5μm		0.05mmN
 Wafer
Si		VariousLapping
Polishing		2μm≤Ra 0.02 μm3μm
±1μm		0.1mmN
 LED substrate copperΦ169mmLapping
Polishing 		5μm≤Ra 0.01 μm5μm
±1μm		Not required N
 Substrate
MgO 		Φ72mmLapping1μmNot Required1μm0.1mmN
 Substrate
Al2O3		Φ158mmLapping
Polishing		3um≤Ra 0.02 μm3um
±1μm		0.13mmN
 
 
                

 

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