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Gallium Arsenide Wafer Triple Junction Solar Cells 10*10mm 5*5mm image 1Gallium Arsenide Wafer Triple Junction Solar Cells 10*10mm 5*5mm image 2

Gallium Arsenide Wafer Triple Junction Solar Cells 10*10mm 5*5mm

Ningbo Zucoo Tools Co., Ltd

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ZC-01111
ZUCOO
Carton
As according to customers' request.
China
Product Description

 

Monocrystalline Solar Cell Efficiency 20% 125 x 125 mm PV Solar Cells for Solar Panel
 
PYSICAL CHARACTERISTICS
Dimension 125mm X125mm± 0.25mm Wafer Thickness 180µm ± 20µm / 200µm ± 20µm Front(-) Blue silicon nitride anti-reflection coatings 1.4mm silver busbars
Back(+) Full-surface aluminum back-surface field 2mm (silver/ aluminum) discontinuoussoldering pads
 
TYPICAL ELECTRICAL CHARACTERISTICS
Efficiency Code 1860 1880 1900 1940 1960 1980 1990 2000 2010 2020 2030 2040 Efficiency(%) 18.60 18.80 19.00 19.40 19.60 19.80 19.90 20.00 20.10 20.20 20.30 20.40 Pmax(W) 2.890 2.921 2.952 3.015 3.046 3.077 3.092 3.108 3.123 3.139 3.154 3.170 Vmp(V) 0.500 0.500 0.500 0.500 0.500 0.500 0.500 0.500 0.500 0.500 0.500 0.500 Imp(A) 5.781 5.843 5.905 6.029 6.091 6.153 6.185 6.216 6.247 6.278 6.309 6.340 Voc(V) 0.590 0.590 0.590 0.590 0.590 0.590 0.590 0.590 0.590 0.590 0.590 0.590 Isc(A) 6.127 6.193 6.259 6.391 6.457 6.523 6.556 6.589 6.621 6.654 6.687 6.720
 

Concertrator triple junction gaas solar cell

materialGaInP2/InGaAs/G-e
Anti-reflection filmTiOx/Al203
SIZE11X10.2mm2±0.01mm2
Effective area100mm2
thickness175±20μm
polarityN-P
Positive and negative electrode

~6μm;~4μm

 

Typical electrical data

 

Sun concentration

Isc (A)

Voc\V)

mp(A)

Vmp(V)

FF

Eff

X 500

1.872

3.232

1.794

2.852

84.58%

40.93%

X 1000

3.772

3.253

3.456

2.913

82.05%

40.27%

Measurement condition: AM1.5G,T= 25"C.50W/cm2 (x500),100W/cm2 (X100)

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