Model NO.
SFS04R013UGF PDFN5 x 6
Transport Package
Air
Trademark
Orientalsemiconductor
Origin
China
HS Code
854129000
Production Capacity
20kkkk/Monthly
Type:
Car Power Inverter
Certification:
RoHS, Aec-Q101
Description:
Extremely Low Switching Loss
Characteristics:
Excellent Stability and Uniformity
Applications:
PC Power
Industries:
LED Lighting
General Description
FSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.
Features
Applications
Key Performance Parameters
Marking Information
FSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.
Features
- Low RDS(ON) & FOM (Figure of Merit)
- Extremely low switching loss
- Excellent reliability and uniformity
- Fast switching and soft recovery
- AEC-Q101 Qualified for Automotive Applications
Applications
- Consumer electronic power supply
- Motor control
- Synchronous rectification
- Isolated DC/DC convertor
- Invertors
Key Performance Parameters
| Parameter | Value | Unit |
| VDS | 40 | V |
| ID, pulse | 600 | A |
| RDS(ON) max @ VGS=10V | 1.1 | mΩ |
| Qg | 118.4 | nC |
Marking Information
| Product Name | Package | Marking |
| SFS04R013UGF | PDFN5 x 6 | SFS04R013UG |
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Value | Unit |
| Drain source voltage | VDS | 40 | V |
| Gate source voltage | VGS | ±20 | V |
| Continuous drain current1), TC=25 °C | ID | 200 | A |
| Pulsed drain current2), TC=25 °C | ID, pulse | 600 | A |
| Continuous diode forward current1), TC=25 °C | IS | 200 | A |
| Diode pulsed current2), TC=25 °C | IS, Pulse | 600 | A |
| Power dissipation3), TC=25 °C | PD | 178 | W |
| Single pulsed avalanche energy5) | EAS | 144 | mJ |
| Operation and storage temperature | Tstg,Tj | -55 to 175 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.84 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 40 | V | VGS=0 V, ID=250 μA | ||
| Gate threshold voltage | VGS(th) | 1.2 | 2.5 | V | VDS=VGS, ID=250 μA | |
| Drain-source on- state resistance | RDS(ON) | 0.9 | 1.1 | mΩ | VGS=10 V, ID=20 A | |
| Drain-source on- state resistance | RDS(ON) | 1.5 | 2.0 | mΩ | VGS=6 V, ID=20 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V | ||
| -100 | VGS=-20 V | |||||
| Drain-source leakage current | IDSS | 1 | uA | VDS=40 V, VGS=0 V | ||
| Gate resistance | RG | 3.2 | Ω | ƒ=1 MHz, Open drain |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 5453 | pF | VGS=0 V, VDS=25 V, ƒ=100 kHz | ||
| Output capacitance | Coss | 1951 | pF | |||
| Reverse transfer capacitance | Crss | 113 | pF | |||
| Turn-on delay time | td(on) | 23.9 | ns | VGS=10 V, VDS=40 V, RG=2 Ω, ID=40 A | ||
| Rise time | tr | 16.9 | ns | |||
| Turn-off delay time | td(off) | 80.4 | ns | |||
| Fall time | tf | 97.7 | ns |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 85.6 | nC | VGS=10 V VDS=40 V, ID=40 A, | ||
| Gate-source charge | Qgs | 17.6 | nC | |||
| Gate-drain charge | Qgd | 14.5 | nC | |||
| Gate plateau voltage | Vplateau | 3.6 | V |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.3 | V | IS=20 A, VGS=0 V | ||
| Reverse recovery time | trr | 71.1 | ns | VR=40 V, IS=40 A, di/dt=100 A/μs | ||
| Reverse recovery charge | Qrr | 50.1 | nC | |||
| Peak reverse recovery current | Irrm | 1.2 | A |
Note
- Calculated continuous current based on maximum allowable junction temperature.
- Repetitive rating; pulse width limited by max. junction temperature.
- Pd is based on max. junction temperature, using junction-case thermal resistance.
- The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
1. What service do you have ?
We are supplier and manufacturer of original Power mosfet and IGBT semiconductor,We could supply competitive price and expected fast delivery and good quality with prompt service, We have our own R&D team , and Engineer to ensure to offer the best service to clients for sustainable support .
2. May I have some samples for testing?
We offer free samples for our customers and they only need to pay the freight for samples.
3. What about the delivery ?
Usually the lead time is about 1-4 weeks after receiving payment. For normal producing parts ,Please tell us three months in advance as global sourcing plan,we would have the quantity in stock all the year
4. What about the payment terms ?
This can be discussed based on the actual order situation.
5. What about the shipment terms ?
EXW SHANGHAI ; We also work with DHL, FEDEX, TNT and etc. For large quantity , it's up to clients to choose the freight forwarder, our we can offer the service to assist clients
6. Do you have any minimum order quantity requirement?
Based on the different products, for first trial order to test, we can offer the quantity based on clients request, for repeated order, MOQ is based on the minimum packaging quantity.
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